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PHOTODIODE
Si PIN photodiode
S1223 series
For visible to IR, precision photometry
Features Applications
S1223: fc=30 MHz S1223-01: fc=20 MHz l Low capacitance
l High sensitivity l High reliability l High-speed response
l Optical measurement equipment l Analytical equipment, etc.
s General ratings
Parameter Window material Package Active area size Effective active area Symbol A S1223 borosilicate glass TO-5 2.4 x 2.8 6.6 3.6 x 3.6 13 S1223-01 Unit mm mm2
s Absolute maximum ratings
Parameter Symbol Reverse voltage VR Max. Power dissipation P Operating temperature Topr Storage temperature Tstg S1223 30 100 -40 to +100 -55 to +125 S1223-01 Unit V mW C C
s Electrical and optical characteristics (Ta=25 C)
Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Temp. coefficient of ID Cut-off frequency Terminal capacitance Noise equivalent power Symbol p S Condition Min. 5 S1223 Typ. 320 to 1100 960 0.6 0.45 0.52 0.54 6.3 0.1 1.15 30 10 9.4 x 10-15 Max. 10 Min. 10 S1223-01 Typ. 320 to 1100 960 0.6 0.45 0.52 0.54 13 0.2 1.15 20 20 1.3 x 10-14 Max. 10 Unit nm nm A/W A nA times/C MHz pF W/Hz1/2
Isc ID TCID fc VR=20 V, -3 dB Ct VR=20 V, f=1 MHz NEP VR=20 V, =p
=p =660 nm =780 nm =830 nm 100 lx VR=20 V
1
Si PIN photodiode
s Spectral response
0.7 (Typ. Ta=25 C)
S1223 series
(Typ.)
s Photo sensitivity temperature characteristic
+1.5
0.6
TEMPERATURE COEFFICIENT (%/C)
PHOTO SENSITIVITY (A/W)
0.5 0.4 0.3
+1.0
+0.5
0.2 0.1 0 200
0
400
600
800
1000
-0.5 200
400
600
800
1000
WAVELENGTH (nm)
KPINB0143EA
WAVELENGTH (nm)
KPINB0144EA
s Dark current vs. reverse voltage
10 nA (Typ. Ta=25 C)
s Terminal capacitance vs. reverse voltage
1 nF (Typ. Ta=25 C, f=1 MHz)
1 nA
TERMINAL CAPACITANCE
DARK CURRENT
100 pF
S1223-01
100 pA
10 pF
S1223-01 10 pA S1223
S1223
1 pA 0.1
1
10
100
1 pF 0.1
1
10
100
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
KPINB0145EA KPINB0146EA
s Dimensional outline (unit: mm)
9.1 0.2
4.1 0.2 2.8
WINDOW 5.9 0.1
8.1 0.1
PHOTOSENSITIVE SURFACE 0.45 LEAD
5.08 0.2
CONNECTED TO CASE
The glass window may extend a maximum of 0.2 mm above the upper surface of the cap.
20
KPINA0073EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KPIN1050E01 Aug. 2006 DN

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